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13 March 2019 Low-threshold InAs-based interband cascade lasers with room-temperature emission at 6.3 μm (Conference Presentation)
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Interband cascade lasers (ICLs) are becoming a leading semiconductor laser technology for the mid-infrared because of their high efficiency and low power consumption, especially as compared with conventional diode lasers and intersubband quantum cascade lasers (QCLs) in the wavelength range from 3-5 μm. Although a greater effort has been directed towards GaSb-based ICLs in the ~3-5μm range, recent work has highlighted the exciting potential for InAs-based ICLs for reaching longer emission wavelengths. In this work we report the development of low-threshold InAs-based ICLs with a room-temperature emission wavelength of 6.3μm. The devices were grown on n+-InAs (100) substrates by solid-source molecular beam epitaxy in a custom V90 system using valved crackers for Sb2 and As2. The ICL structures employ an improved waveguide design using intermediate AlAs/AlSb/InAs strain-balanced superlattice cladding layers surrounded by heavily-doped n+-InAs plasmonic claddings. The active region includes 15-stages with AlSb/InAs/In(0.35)Ga(0.65)Sb/InAs/AlSb type-II “W” quantum wells and optimized electron injector doping. In pulsed mode, broad-area devices lased at 300 K at a lasing wavelength of 6.26 μm and a threshold current density of 395 A/cm2 which is the lowest ever reported among semiconductor lasers at similar wavelengths. The broad-area devices lased up to 335K in pulsed mode at a wavelength of 6.45 μm. These results provide strong evidence of the potential for InAs-based ICLs as efficient sources in the mid-IR.
Conference Presentation
© (2019) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
James A. Gupta, Xiaohua Wu, Geof C. Aers, Yiyun Li, Lu Li, Wenxiang Huang, and Rui Q. Yang "Low-threshold InAs-based interband cascade lasers with room-temperature emission at 6.3 μm (Conference Presentation)", Proc. SPIE 10939, Novel In-Plane Semiconductor Lasers XVIII, 109390Y (13 March 2019);

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