Presentation
13 March 2019 Advances in development of the GaSb-based type-I quantum-well cascade-diode lasers: wavelength tuning and mode-locking (Conference Presentation)
Leon Shterengas, Takashi Hosoda, Tao Feng, Jiang Jiang, Alexey Belyanin, Gela Kipshidze, Gregory Belenky
Author Affiliations +
Abstract
Cascade pumping of type-I quantum well gain sections led to increase of the output power and efficiency of GaSb-based diode lasers operating in spectral region from 1.9 to 3.3 µm. The wide stripe multimode lasers based on cascade lasers heterostructures generate watt class output power levels up to 3 µm. The corresponding narrow ridge single spatial mode and single frequency mode distributed feedback devices generate tens of mW. The external cavity lasers utilizing gain chips based on cascade diode laser heterostructures demonstrate extra wide tuning range. The short pulse passively mode-locked lasers generate optical frequency combs.
Conference Presentation
© (2019) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Leon Shterengas, Takashi Hosoda, Tao Feng, Jiang Jiang, Alexey Belyanin, Gela Kipshidze, and Gregory Belenky "Advances in development of the GaSb-based type-I quantum-well cascade-diode lasers: wavelength tuning and mode-locking (Conference Presentation)", Proc. SPIE 10939, Novel In-Plane Semiconductor Lasers XVIII, 1093918 (13 March 2019); https://doi.org/10.1117/12.2513637
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KEYWORDS
Semiconductor lasers

Mode locking

Quantum wells

Wavelength tuning

Quantum cascade lasers

Heterojunctions

Laser optics

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