Bistability in a monolithic multi-section quantum dot semiconductor laser

Dominik Auth; Christoph Weber; Stefan Breuer; Paolo Bardella; Lorenzo L. Columbo

doi:10.1117/12.2510221

4 March 2019 Bistability in a monolithic multi-section quantum dot semiconductor laser

Dominik Auth, Christoph Weber, Stefan Breuer, Paolo Bardella, Lorenzo L. Columbo

Proceedings Volume 10939, Novel In-Plane Semiconductor Lasers XVIII; 109391S (2019) https://doi.org/10.1117/12.2510221
Event: SPIE OPTO, 2019, San Francisco, California, United States

Abstract

We experimentally study the emission dynamics of a monolithic multi-section semiconductor laser based on InAs/InGaAs quantum dot (QD) material in the regime of passive mode-locked (ML) operation obtained via saturable losses in the absorber (reversed biased). When the active section is biased above the lasing threshold we observe emission of a regular train of optical pulses at 1250nm with characteristic repetition rate of 6 GHz. By sweeping back the pump current below lasing threshold, we verify that the ML solution coexists with the zero intensity ("off") solution, even in absence of any external optical injection.¹ These evidences are very promising for the observation of temporal localized structures in compact, monolithic semiconductor photonics devices. Experimental results are validated by numerical simulations performed using a multi-section delayed differential equation (DDE) model to compute the evolution of the electrical field, coupled with the rate-equations that describe the carrier dynamics in the QD active and absorber media.

Citation Download Citation

Dominik Auth, Christoph Weber, Stefan Breuer, Paolo Bardella, and Lorenzo L. Columbo "Bistability in a monolithic multi-section quantum dot semiconductor laser", Proc. SPIE 10939, Novel In-Plane Semiconductor Lasers XVIII, 109391S (4 March 2019); https://doi.org/10.1117/12.2510221

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