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4 March 2019 Bistability in a monolithic multi-section quantum dot semiconductor laser
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We experimentally study the emission dynamics of a monolithic multi-section semiconductor laser based on InAs/InGaAs quantum dot (QD) material in the regime of passive mode-locked (ML) operation obtained via saturable losses in the absorber (reversed biased). When the active section is biased above the lasing threshold we observe emission of a regular train of optical pulses at 1250nm with characteristic repetition rate of 6 GHz. By sweeping back the pump current below lasing threshold, we verify that the ML solution coexists with the zero intensity ("off") solution, even in absence of any external optical injection.1 These evidences are very promising for the observation of temporal localized structures in compact, monolithic semiconductor photonics devices. Experimental results are validated by numerical simulations performed using a multi-section delayed differential equation (DDE) model to compute the evolution of the electrical field, coupled with the rate-equations that describe the carrier dynamics in the QD active and absorber media.
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Dominik Auth, Christoph Weber, Stefan Breuer, Paolo Bardella, and Lorenzo L. Columbo "Bistability in a monolithic multi-section quantum dot semiconductor laser", Proc. SPIE 10939, Novel In-Plane Semiconductor Lasers XVIII, 109391S (4 March 2019);

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