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26 March 2019 Overview and status of the 0.5NA EUV microfield exposure tool at Berkeley Lab
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Abstract
A 0.5-NA extreme ultraviolet micro-field exposure tool has been installed and commissioned at beamline 12.0.1.4 of the Advanced Light Source synchrotron facility at Lawrence Berkeley National Laboratory. Commissioning has demonstrated a patterning resolution of 13 nm half-pitch with annular 0.35 – 0.55 illumination; a patterning resolution of 8 nm half-pitch with annular 0.1 – 0.2 illumination; critical dimension (CD) uniformity of 0.7 nm 1σ on 16 nm nominal CD across 80% of the 200 um x 30 um aberration corrected field of view; aerial image vibration relative to the wafer of 0.75 nn RMS and focus control and focus stepping better than 15 nm.
Conference Presentation
© (2019) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Christopher Anderson, Arnaud Allezy, Weilun Chao, Carl Cork, Will Cork, Rene Delano, Jason DePonte, Michael Dickinson, Geoff Gaines, Jeff Gamsby, Eric Gullikson, Gideon Jones, Stephen Meyers, Ryan Miyakawa, Patrick Naulleau, Senajith Rekawa, Farhad Salmassi, Brandon Vollmer, Daniel Zehm, and Wenhua Zhu "Overview and status of the 0.5NA EUV microfield exposure tool at Berkeley Lab", Proc. SPIE 10957, Extreme Ultraviolet (EUV) Lithography X, 1095708 (26 March 2019); https://doi.org/10.1117/12.2516339
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