CONFERENCE PROCEEDINGS
Advanced Search
Home > Proceedings > Volume 10957 > Article
Presentation + Paper
26 March 2019 Towards ultimate image placement accuracy for EUV mask writing with pattern shift process
Vadim Sidorkin, Stephan Zimmermann, Stefan Proske, Michael Finken, G. R. Cantrell, Markus Bender
Author Affiliations +
Proceedings Volume 10957, Extreme Ultraviolet (EUV) Lithography X; 109570K (2019) https://doi.org/10.1117/12.2513666
Event: SPIE Advanced Lithography, 2019, San Jose, California, United States
Abstract
The lack of defect-free EUV photomask blanks is one of the multiple challenges in the application of EUV lithography for high volume wafer manufacturing. In EUV photomask manufacturing, shifting the design before writing to avoid patterning over blank defects (pattern shift process) is one of the methods for defect mitigation. A reliable pattern shift process depends upon precise image placement during EUV mask writing. Specifically, accurate determinations of centrality, mean shift distances and residual image placement (IP) errors (3σ) are required and reports describing pattern shift processes1-8 echo this importance of accurate IP during EUV photomask writing. The pattern shift process detailed in this report improves IP accuracy for EUV photomasks aligned on fiducial marks (FM) and increases the budget of potential pattern shifts, while remaining within the mask centrality specification limits. Our process is demonstrated on EUV products where <5 nm 3σ of uncorrected IP error for aligned patterns was achieved.
Conference Presentation
© (2019) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Citation Download Citation
Vadim Sidorkin, Stephan Zimmermann, Stefan Proske, Michael Finken, G. R. Cantrell, and Markus Bender "Towards ultimate image placement accuracy for EUV mask writing with pattern shift process", Proc. SPIE 10957, Extreme Ultraviolet (EUV) Lithography X, 109570K (26 March 2019); https://doi.org/10.1117/12.2513666
ACCESS THE FULL ARTICLE
ORGANIZATIONAL
Sign in with credentials provided by your organization.
INSTITUTIONAL
Select your institution to access the SPIE Digital Library.
SELECT YOUR INSTITUTION
PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.
PERSONAL SIGN IN
No SPIE Account? Create one
PURCHASE THIS CONTENT
SUBSCRIBE TO DIGITAL LIBRARY
50 downloads per 1-year subscription
Members: $195
Non-members: $335 ADD TO CART
25 downloads per 1 - year subscription
Members: $145
Non-members: $250 ADD TO CART
PURCHASE SINGLE ARTICLE
Includes PDF, HTML & Video, when available
Members: $17.00
Non-members: $21.00 ADD TO CART
PROCEEDINGS
 9 PAGES + PRESENTATION
DOWNLOAD PAPER SAVE TO MY LIBRARY
WATCH
PRESENTATION
GET CITATION
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Extreme ultraviolet
Photomasks
Metrology
Electron beam lithography
Reticles
RELATED CONTENT
Subscribe to Digital Library
Receive Erratum Email Alert
Back to Top