Upgrade to the SHARP EUV mask microscope

Markus Benk; Weilun Chao; Ryan Miyakawa; Kenneth Goldberg; Patrick Naulleau

doi:10.1117/12.2516387

26 March 2019 Upgrade to the SHARP EUV mask microscope

Markus Benk, Weilun Chao, Ryan Miyakawa, Kenneth Goldberg, Patrick Naulleau

Proceedings Volume 10957, Extreme Ultraviolet (EUV) Lithography X; 109570V (2019) https://doi.org/10.1117/12.2516387
Event: SPIE Advanced Lithography, 2019, San Jose, California, United States

Abstract

The Sharp High-NA Actinic Reticle review Project (SHARP) is a synchrotron-based, extreme ultraviolet (EUV) microscope dedicated to photomask research. A potential upgrade to the SHARP microscope is presented. The upgrade includes changing the light path in the instrument from its current off-axis configuration to an on-axis configuration. This change allows for an increased working distance of 2.5 mm or more. A central obscuration, added to the zoneplate aperture, blocks stray light from reaching the central part of the image, thus improving the image contrast. The imaging performance of the two configurations is evaluated by means of ray tracing.

Citation Download Citation

Markus Benk, Weilun Chao, Ryan Miyakawa, Kenneth Goldberg, and Patrick Naulleau "Upgrade to the SHARP EUV mask microscope", Proc. SPIE 10957, Extreme Ultraviolet (EUV) Lithography X, 109570V (26 March 2019); https://doi.org/10.1117/12.2516387

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