Fundamental study on dissolution kinetics of poly(4-hydroxystyrene) for development of high-resolution resists

Ayako Nakajima; Kyoko Watanabe; Kyoko Matsuoka; Takahiro Kozawa; Yoshitaka Komuro; Daisuke Kawana; Akiyoshi Yamazaki

doi:10.1117/12.2514938

31 May 2019 Fundamental study on dissolution kinetics of poly(4-hydroxystyrene) for development of high-resolution resists

Ayako Nakajima, Kyoko Watanabe, Kyoko Matsuoka, Takahiro Kozawa, Yoshitaka Komuro, Daisuke Kawana, Akiyoshi Yamazaki

Author Affiliations +

Proceedings Volume 10957, Extreme Ultraviolet (EUV) Lithography X; 109571R (2019) https://doi.org/10.1117/12.2514938
Event: SPIE Advanced Lithography, 2019, San Jose, California, United States

Abstract

We investigated the dissolution kinetics of poly(4-hydroxystyrene) (PHS) in an alkali developer with tetramethylammoniumhydroxide (TMAH). Experiments using PHS with different molecular weights and molecular weight dispersions and developer with different concentrations of TMAH led to the clarification of the dissolution behavior. Not only a change in the dissolution time but also a change in the dissolution behavior was observed upon changing the concentration of the developer. The dissolution behavior depends on an index calculated from values indicating the effects of swelling and dissolving. The dissolution occurred through the swelling of the polymer bulk and the subsequent diffusion of polymer chains into the solution bulk. The development using the alkali aqueous solution system was complex. The swelling rate should not be much larger than the dissolving rate for the development of high-resolution resists because a high swelling rate causes the generation of defects during the fabrication of fine structures.

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Ayako Nakajima, Kyoko Watanabe, Kyoko Matsuoka, Takahiro Kozawa, Yoshitaka Komuro, Daisuke Kawana, and Akiyoshi Yamazaki "Fundamental study on dissolution kinetics of poly(4-hydroxystyrene) for development of high-resolution resists", Proc. SPIE 10957, Extreme Ultraviolet (EUV) Lithography X, 109571R (31 May 2019); https://doi.org/10.1117/12.2514938

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