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26 March 2019 YieldStar uDBO overlay metrology in Samsung D1y DRAM volume production
Jang-Sun Kim, Jin-Moo Byun, Remco Lancee, Jong-Hyun Hwang, Hyeon-Jun Ha, Kwang-Young Hu, Se-Ra Jeon, Won-Jae Jang, Hyung-Sub Son, Vidar van der Meijden, Marc Noot, Bartosz Foltynski, Lukasz Macht, Grzegorz Grzela, Cedric Grouwstra
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Proceedings Volume 10959, Metrology, Inspection, and Process Control for Microlithography XXXIII; 109592M (2019) https://doi.org/10.1117/12.2514931
Event: SPIE Advanced Lithography, 2019, San Jose, California, United States
Abstract
To produce high-yielding wafers, overlay control in DRAM production needs to be exceptionally tight. The ASML YieldStar 375F introduces a continuous wavelength source and dual wavelength operation to deliver the high measurement accuracy and robustness required as input to the overlay control loop. At the same time, the high throughput required to allow high sampling densities is maintained. The YieldStar 375 was evaluated and adopted for Samsung’s D1y DRAM node.
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Jang-Sun Kim, Jin-Moo Byun, Remco Lancee, Jong-Hyun Hwang, Hyeon-Jun Ha, Kwang-Young Hu, Se-Ra Jeon, Won-Jae Jang, Hyung-Sub Son, Vidar van der Meijden, Marc Noot, Bartosz Foltynski, Lukasz Macht, Grzegorz Grzela, and Cedric Grouwstra "YieldStar uDBO overlay metrology in Samsung D1y DRAM volume production", Proc. SPIE 10959, Metrology, Inspection, and Process Control for Microlithography XXXIII, 109592M (26 March 2019); https://doi.org/10.1117/12.2514931
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KEYWORDS
Overlay metrology
Metrology
Front end of line
Yield improvement
Control systems
Scatterometry
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