Paper
20 March 2019 Design rule exploration for width sensitive zone for metal layers in advanced nodes
Author Affiliations +
Abstract
Use of lithography exposure and metrology tools in production typically results in worse performance than seen on test wafers. Physical design always starts with rough design rule for a new technology node. To evaluate the influence of the inevitable degraded performance on test wafers, our paper put forward a systematic approach to evaluate whether the ability of current process can support the design. The approach utilizes litho-friendly design (LFD) to find the yield killers and conducts pattern classification with pattern matching. Process window discovery (PWD) is used to collect the statistical data to confirm whether the yield killers in LFD simulation will meet the systematic fail on wafer. It is necessary to do mask optimization (MO), source mask optimization (SMO) and design rule optimization (DRO) for the real yield killers. Moreover, design of advanced node may include the patterns inside forbidden pitch range. We do the design rule exploration for metal 2 layer of 14nm technology node and discuss the corresponding solutions for width sensitive zone as well.
© (2019) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Xiaojing Su, Lisong Dong, Yayi Wei, Yajuan Su, Rui Chen, and Chunshan Du "Design rule exploration for width sensitive zone for metal layers in advanced nodes", Proc. SPIE 10962, Design-Process-Technology Co-optimization for Manufacturability XIII, 1096212 (20 March 2019); https://doi.org/10.1117/12.2514783
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KEYWORDS
Photomasks

Source mask optimization

Metals

Lithography

Etching

Semiconducting wafers

Electroluminescence

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