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13 September 1989 Large Area Epitaxial HgCdTe Growth For Second Generation IRFPA Applications
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Abstract
Large area HgCdTe epitaxial films grown on CdTe substrates are routinely used to produce high quality devices. Scaleup of substrate and liquid phase epitaxial (LPE) film growth and characterization processes will give techniques capable of supplying the throughput of low cost, high quality material required for manufacturing of large area infrared focal plane arrays (IRFPA).
© (1989) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
W. Higgins, J. Egerton, P. Zimmermann, M. Reine, A. Sood, and C. Johnson "Large Area Epitaxial HgCdTe Growth For Second Generation IRFPA Applications", Proc. SPIE 1097, Materials, Devices, Techniques, and Applications for Z-Plane Focal Plane Array, (13 September 1989); https://doi.org/10.1117/12.960384
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