Paper
4 December 2018 Emitted beam stabilization in junction plane by lateral periodic structure in laser diodes emitting at 980 nm
Andrzej Maląg, Grzegorz Sobczak, Elżbieta Dąbrowska, Marian Teodorczyk
Author Affiliations +
Proceedings Volume 10974, Laser Technology 2018: Progress and Applications of Lasers; 1097404 (2018) https://doi.org/10.1117/12.2516448
Event: Thirteenth Symposium on Laser Technology, 2018, Jastarnia, Poland
Abstract
In this paper the possibility of improvement of emitted beam quality of high-power laser diodes by stabilization of an optical field distribution in the junction plane, forced by lateral periodicity built into their wide-stripe waveguide is described. Current flow control by such periodic structure prevents the lateral current crowding, carrier accumulation at the stripe edges and optical far-field blooming typical for conventional wide-stripe laser diodes. As a result, stabilization of the lateral emitted beam divergence in wide drive current range of CW operation has been evidenced.
© (2018) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Andrzej Maląg, Grzegorz Sobczak, Elżbieta Dąbrowska, and Marian Teodorczyk "Emitted beam stabilization in junction plane by lateral periodic structure in laser diodes emitting at 980 nm", Proc. SPIE 10974, Laser Technology 2018: Progress and Applications of Lasers, 1097404 (4 December 2018); https://doi.org/10.1117/12.2516448
Lens.org Logo
CITATIONS
Cited by 1 scholarly publication.
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Heterojunctions

Diodes

Modulation

Waveguides

Etching

Semiconductor lasers

Quantum wells

RELATED CONTENT

Type I QW cascade diode lasers with 830 mW of...
Proceedings of SPIE (March 10 2015)
1180 nm GaInNAs quantum well based high power DBR laser...
Proceedings of SPIE (February 24 2017)
High-power BA Al-free InGaAsP/GaAs SCH SQW lasers
Proceedings of SPIE (August 19 1998)
808 nm Al free InGaAsP GaAs SCH SQW lasers fabricated...
Proceedings of SPIE (August 19 1998)
High power and low noise 1.55 µm InP based quantum...
Proceedings of SPIE (September 01 2004)

Back to Top