Recent progress on GaSb-based electrically-pumped VCSELs for wavelengths above 4 µm

S. Arafin; H. Jung

doi:10.1117/12.2522418

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13 May 2019 Recent progress on GaSb-based electrically-pumped VCSELs for wavelengths above 4 μm

S. Arafin, H. Jung

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Proceedings Volume 10980, Image Sensing Technologies: Materials, Devices, Systems, and Applications VI; 109800H (2019) https://doi.org/10.1117/12.2522418
Event: SPIE Defense + Commercial Sensing, 2019, Baltimore, Maryland, United States

Abstract

This paper reports the recent progress on the development of GaSb-based vertical-cavity surface-emitting lasers (VCSELs) with a record-long emission wavelength of above 4 μm using type-II quantum wells. Mid-wave infrared (MWIR) spectral region, covering the 3-6 μm wavelength range, is technologically very interesting for enabling two major application areas such as sensing and defense/security. Among several types of diode lasers, electricallypumped continuous-wave operating VCSELs seem to be the most attractive choice owing to their low-power consumption, inherent longitudinal single-mode emission, and simple electro-thermal wavelength tunability. The applicability of MWIR VCSELs for these two major areas are also discussed in this paper. Single-mode low-power (a few mWs) VCSEL operating at room-temperature with reasonable tunability is essential for the sensing application. For the advanced military application, high optical power (with at least a few watts), high-efficiency and high-brightness (>1 W/mm²) MWIR lasers are important. Given that the MWIR wavelength regime is eye-safe and has a low-loss atmospheric window, the development of next-generation MWIR laser sources is currently in high demand.

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S. Arafin and H. Jung "Recent progress on GaSb-based electrically-pumped VCSELs for wavelengths above 4 μm", Proc. SPIE 10980, Image Sensing Technologies: Materials, Devices, Systems, and Applications VI, 109800H (13 May 2019); https://doi.org/10.1117/12.2522418

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