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14 May 2019 The emergence of InAs/InAsSb type-II strained layer superlattice barrier infrared detectors
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Abstract
The InAs/InAsSb (Gallium-free) type-II strained-layer superlattice (T2SLS) is an adjustable band gap, broad-band III-V infrared detector material that has emerged in recent years as an alternative to the more established InAs/GaSb type-II superlattice. We have reported results on a mid-wavelength focal plane array (FPA) based on the InAs/InAsSb T2SLS unipolar barrier infrared detector architecture. Significantly, the FPA exhibits very good operating characteristics at 160 K, demonstrating a considerably operating temperature advantage over the MWIR market-leading InSb FPAs, while maintaining III-V semiconductor manufacturing robustness. In this article we summarize the development at the NASA Jet Propulsion Laboratory leading to the mid-wavelength InAs/InAsSb T2SLS infrared detectors, provide a brief look at the history of the development of the InAs/InAsSb T2SLS absorber, and survey the current status of InAs/InAsSb T2SLS detectors.
Conference Presentation
© (2019) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
David Z. Ting, Alexander Soibel, Arezou Khoshakhlagh, Sam A. Keo, Sir B. Rafol, Anita M. Fisher, Cory J. Hill, Edward M. Luong, Brian J. Pepper, and Sarath D. Gunapala "The emergence of InAs/InAsSb type-II strained layer superlattice barrier infrared detectors", Proc. SPIE 11002, Infrared Technology and Applications XLV, 110020F (14 May 2019); https://doi.org/10.1117/12.2521093
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