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7 May 2019 Development of shutter-less SOI diode uncooled IRFPA for compact size and low power consumption
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In this study, we develop a shutter-less algorithm for a silicon-on-insulator (SOI) diode uncooled infrared focal plane array (IRFPA). The optimal non-uniformity correction is calculated onboard. The effectiveness of the proposed algorithm was verified using a prototype uncooled IR camera. The performance of the shutter-less algorithm was studied by measuring a fixed pattern noise (FPN) at different correction points and verification of favorable camera operation. Even at two correction points, the FPN was at a practical level. The temperature behavior of the proposed SOI diode is highly uniform and predictable, which leads to simpler device modeling and therefore simpler shutter-less operation. A new pixel structure was also developed for pixel size reduction. This approach is based on the realization of a novel thermal isolation structure that can be fabricated by post processing on top of CMOS wafers. Ten series diodes can be arranged in a pixel by designing a 12 μm pixel pitch IRFPA with the new pixel structure. These developed technologies have significantly enhanced the performance of the SOI diode uncooled IRFPA, which inherently possesses excellent uniformity and low noise.
© (2019) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
D. Fujisawa, Y. Kosasayama, T. Takikawa, H. Hata, T. Takenaga, T. Satake, K. Yamashita, and D. Suzuki "Development of shutter-less SOI diode uncooled IRFPA for compact size and low power consumption", Proc. SPIE 11002, Infrared Technology and Applications XLV, 110022C (7 May 2019);

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