Deep silicon plasma etching: selection of processes for different applications

A. V. Miakonkikh; S. N. Averkin; K. V. Rudenko; V. F. Lukichev

doi:10.1117/12.2522505

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15 March 2019 Deep silicon plasma etching: selection of processes for different applications

A. V. Miakonkikh, S. N. Averkin, K. V. Rudenko, V. F. Lukichev

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Proceedings Volume 11022, International Conference on Micro- and Nano-Electronics 2018; 110221X (2019) https://doi.org/10.1117/12.2522505
Event: The International Conference on Micro- and Nano-Electronics 2018, 2018, Zvenigorod, Russian Federation

Abstract

Present paper overviews existent and newly developed DSE technologies offering optimal choice for specific demands. Under consideration there are four types of deep silicon etching processes: cyclic original Bosch process and modified one, continuous cryoetch process, cyclic STiGer process, and new Ox-Etch process. All processes designed with fluorine chemistry of SF₆ based plasma that provides fastest etch reaction with Silicon enhanced by ion bombardment from plasma. The differences are in approach used to suppress the isotropic etching of the structure sidewalls to achieve required anisotropy and of etch process.

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A. V. Miakonkikh, S. N. Averkin, K. V. Rudenko, and V. F. Lukichev "Deep silicon plasma etching: selection of processes for different applications", Proc. SPIE 11022, International Conference on Micro- and Nano-Electronics 2018, 110221X (15 March 2019); https://doi.org/10.1117/12.2522505

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