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15 March 2019 Formation of metallic nanowire and nanonet structures on the surface of SiO2 by combine plasma etching processes
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Proceedings Volume 11022, International Conference on Micro- and Nano-Electronics 2018; 1102221 (2019) https://doi.org/10.1117/12.2521275
Event: The International Conference on Micro- and Nano-Electronics 2018, 2018, Zvenigorod, Russian Federation
Abstract
In this work we report a new approach to the fabrication of metallic nanowire and nanonet structures on a-Si/SiO2/Si substrates by combine plasma etching processes. For the formation of Pt nanostructures we used a controlled two-step plasma etching in C4F8/Ar and SF6 plasma, which resulted in a self-formation of fluorocarbon nanowires and nanonets. Then, we used these nanostructures as nanoscale templates for 10 nm thin metallic nanowires, which were obtained with magnetron Pt film deposition, Ar plasma sputtering and Pt redeposition.
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I. I. Amirov, E. S. Gorlachev, L. A. Mazaletsky, and M. O. Izyumov "Formation of metallic nanowire and nanonet structures on the surface of SiO2 by combine plasma etching processes", Proc. SPIE 11022, International Conference on Micro- and Nano-Electronics 2018, 1102221 (15 March 2019); https://doi.org/10.1117/12.2521275
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