Paper
11 April 2019 Spectral response filtering by lateral scanning of Silicon NSOM photodetector with subwavelength aperture
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Abstract
Persisting in the large trend to enhance the Near-field Scanning Optical Microscopy and the detection of evanescent waves, a silicon Schottky diode, shaped as a truncated trapezoid photodetector, and sharing a subwavelength pin-hole aperture, has been designed and simulated. Using Finite Elements Method and 3D advanced simulations, the detector has been horizontally shifted across a vertically oriented Gaussian beam, which is projected on top of the device. Electrooptical simulations have been conducted. These results are promising towards the fabrication of a new generation of photodetector devices.
© (2019) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Avi Karsenty and Matityahu Karelits "Spectral response filtering by lateral scanning of Silicon NSOM photodetector with subwavelength aperture", Proc. SPIE 11028, Optical Sensors 2019, 110281J (11 April 2019); https://doi.org/10.1117/12.2520508
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KEYWORDS
Near field scanning optical microscopy

Photodetectors

Finite element methods

Silicon

Computer aided design

Optical filters

Optical simulations

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