Triacrylamide polyfluorinated chalcone derivative as high resistant light-sensitive material for technology of diffractive optical elements

Sergey V. Derevyashkin; Elena A. Soboleva; Vladimir V. Shelkovnikov; Victor P. Korolkov; Anatoly I. Malyshev; Evgeny V. Spesivtsev

doi:10.1117/12.2521139

14 May 2019 Triacrylamide polyfluorinated chalcone derivative as high resistant light-sensitive material for technology of diffractive optical elements

Sergey V. Derevyashkin, Elena A. Soboleva, Vladimir V. Shelkovnikov, Victor P. Korolkov, Anatoly I. Malyshev, Evgeny V. Spesivtsev

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Proceedings Volume 11030, Holography: Advances and Modern Trends VI; 110301D (2019) https://doi.org/10.1117/12.2521139
Event: SPIE Optics + Optoelectronics, 2019, Prague, Czech Republic

Abstract

The manufacturing methods and materials for diffractive optical elements are actively developed due to the prospects of their use in various components of the microsystem technology. Photolithography occupies a central place in modern manufacturing technology for such components. The photoresists used in it can be exposed to high (100-150 degrees) temperatures, treated in a liquid environment, aggressive (alkaline, acidic) fluids, reactive ion etching (RIE), and electrolyte exposed to electrochemical deposition of metals. Therefore, the development of photoresist materials with thermo-, plasma-, chemo- and moisture resistance is relevant and of the high interest at this time. One of the promising classes of organic compounds with photoresistive properties is the chalcones. It is shown that polyfluorochalcones are capable of providing the holographic recording of transmission gratings with diffraction efficiency up to 59% and angular selectivity up to 54.5°. The masking and thermal properties of triacrylamide polyfluorochalcon (TAPCh), its triaryl pyrazoline modification (TAP), as well as modifications by prepolymerized triaryl pyrazoline (polyTAP) under liquid chemical conditions (in H₂SO₄, H₃PO₄, NaOH) and reactive ion etching (in plasma CF4) were investigated. A comparison of properties with commercially available photoresists SU-8, AZ4562 was also conducted. It has been shown that TAFH is resistant to liquid etching, which is the same for SU-8, but shows higher results in RIE process; TAFH exceeds the performance of photoresist AZ4562 in resistance to RIE, and significantly exceeds it in liquid (alkaline and acid) etching; thermal stability TAFH exceeds SU-8 and AZ4562.

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Sergey V. Derevyashkin, Elena A. Soboleva, Vladimir V. Shelkovnikov, Victor P. Korolkov, Anatoly I. Malyshev, and Evgeny V. Spesivtsev "Triacrylamide polyfluorinated chalcone derivative as high resistant light-sensitive material for technology of diffractive optical elements", Proc. SPIE 11030, Holography: Advances and Modern Trends VI, 110301D (14 May 2019); https://doi.org/10.1117/12.2521139

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KEYWORDS

Diffraction

Photoresist materials

Reactive ion etching

Etching

Polymers

Refractive index

Holograms

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