Paper
26 April 2019 PECVD silicon nitride optical waveguide devices for sensing applications in the visible and <1µm near infrared wavelength region
Rainer Hainberger, Paul Muellner, Stefan Nevlacsil, Florian Vogelbacher, Moritz Eggeling, Alejandro Maese-Novo, Martin Sagmeister, Günther Koppitsch, Jochen Kraft, Xue Zhou, Jinhua Huang, Mingzhu Li, Ke-Jian Jiang, Yanlin Song
Author Affiliations +
Abstract
We report several PECVD silicon nitride photonic building blocks required for the implementation of a CMOS-compatible photonic integrated circuit technology platform operating in the 850 nm and 600 nm wavelength domain. In particular, for the 850 nm wavelength region we discuss a low-loss broadband 1x2 power splitter and a loop mirror. In the 600 nm wavelength region, we present new results on an optically pumped integrated dye-doped polymer laser that couples its light directly into a silicon nitride waveguide. Moreover, we discuss design considerations for a waveguide based gas sensing concept detecting target gas specific absorption changes in a thin dye-doped polymer cladding layer.
© (2019) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Rainer Hainberger, Paul Muellner, Stefan Nevlacsil, Florian Vogelbacher, Moritz Eggeling, Alejandro Maese-Novo, Martin Sagmeister, Günther Koppitsch, Jochen Kraft, Xue Zhou, Jinhua Huang, Mingzhu Li, Ke-Jian Jiang, and Yanlin Song "PECVD silicon nitride optical waveguide devices for sensing applications in the visible and <1µm near infrared wavelength region", Proc. SPIE 11031, Integrated Optics: Design, Devices, Systems, and Applications V, 110310A (26 April 2019); https://doi.org/10.1117/12.2524277
Lens.org Logo
CITATIONS
Cited by 1 scholarly publication.
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Waveguides

Polymers

Silicon

Photonic integrated circuits

Solid state lasers

Dye lasers

Back to Top