Translator Disclaimer
Paper
24 January 2019 Investigation of light-emission and avalanche-current mechanisms in PureB SPAD devices
Author Affiliations +
Proceedings Volume 11043, Fifth Conference on Sensors, MEMS, and Electro-Optic Systems; 1104306 (2019) https://doi.org/10.1117/12.2501598
Event: Fifth Conference on Sensors, MEMS, and Electro-Optic Systems, 2018, Skukuza, South Africa
Abstract
The light emission from silicon PureB photodiodes was investigated in both forward- and avalanchemode operation and correlated to the presence of process-dependent defects that influence the reverse IV characteristics. As opposed to “defect-free” diodes with low dark currents and abrupt breakdown behavior, the diodes with defects had higher current levels and light-emitting spots appearing at voltages far below the breakdown voltage otherwise set by the implemented doping profiles. The role of such defect-related behavior for the application of the photodiodes as single-photon avalanche diodes (SPADs) and avalanche-mode light-emitting diodes (AMLEDs) is assessed in connection with the recent demonstration of these basic devices as both the light-emitting and light-detecting elements in optocoupler circuits integrated in CMOS for data transmission purposes.
© (2019) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Lis K. Nanver, M. Krakers, T. Knezević, A. Karavidas, I. Boturchuk, V. Agarwal, R. J. E. Hueting, S. Dutta, and A. J. Annema "Investigation of light-emission and avalanche-current mechanisms in PureB SPAD devices", Proc. SPIE 11043, Fifth Conference on Sensors, MEMS, and Electro-Optic Systems, 1104306 (24 January 2019); https://doi.org/10.1117/12.2501598
PROCEEDINGS
14 PAGES


SHARE
Advertisement
Advertisement
RELATED CONTENT


Back to Top