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11 April 2019 III nitride based waveguide parameters optimisation of 1 × 2 optical power divider for telecommunication links.
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Proceedings Volume 11044, Third International Seminar on Photonics, Optics, and Its Applications (ISPhOA 2018); 110440U (2019) https://doi.org/10.1117/12.2504903
Event: Third International Seminar on Photonics, Optics, and Its Applications (ISPhOA 2018), 2018, Surabaya, Indonesia
Abstract
The waveguide parameter optimisation for a simple 1 × 2 optical power divider based on three parallel rectangular waveguides in a gallium-nitride (GaN) semiconductor/sapphire is reported. The optical power divider works according to coupled-mode phenomena. The optimisation was conducted using the 3D FD-BPM method. The results showed that the best geometrical values are 780 μm length and 18 μm width accordingly. It is also shown that at propagation length of 780 μm, the optical power is successfully divided into a uniform two output beams, each with 47.5% of total input power. It is shown that at a wavelength of 1.55 μm, the optical power divider has an excess loss of 0.23 dB.
© (2019) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Retno Wigajatri Purnamaningsih, Maratul Hamidah, Dini Fithriaty, and M. Raditya Gumelar "III nitride based waveguide parameters optimisation of 1 × 2 optical power divider for telecommunication links.", Proc. SPIE 11044, Third International Seminar on Photonics, Optics, and Its Applications (ISPhOA 2018), 110440U (11 April 2019); https://doi.org/10.1117/12.2504903
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