Paper
29 March 2019 Diode-end-pumped actively Q-switched YVO4 Raman laser at 2291nm
Sihou Duan, Xikui Ren, Jian Xie, Yongqin Yu, Chenlin Du
Author Affiliations +
Proceedings Volume 11046, Fifth International Symposium on Laser Interaction with Matter; 110461S (2019) https://doi.org/10.1117/12.2524419
Event: Fifth International Symposium on Laser Interaction with Matter, 2018, Changsha, China
Abstract
This paper demonstrate an intracavity Raman laser at 2291 nm by using YVO4 crystal as Raman crystal to achieve efficient Raman conversion in a compact diode-end-pumped actively Q-switched Tm:YLF (Tm3+-doped lithium yttrium fluoride) laser with an L-shaped cavity. With a pump source of fiber-coupled continuous-wave diode laser operating at 793 nm, the Tm:YLF crystal served as gain material in the Raman laser. We made experimental research on the characteristics of first-Stokes Raman laser output the different pulse repetition rates (PRFs). The maximum average output power, pulse width and the corresponding peak power were 175.2 mW, 21.41 ns and 1.63 kW respectively at a pluse repetition frequency of 5 kHz and an incident pump power of 21W.
© (2019) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Sihou Duan, Xikui Ren, Jian Xie, Yongqin Yu, and Chenlin Du "Diode-end-pumped actively Q-switched YVO4 Raman laser at 2291nm", Proc. SPIE 11046, Fifth International Symposium on Laser Interaction with Matter, 110461S (29 March 2019); https://doi.org/10.1117/12.2524419
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KEYWORDS
Raman spectroscopy

Laser crystals

Semiconductor lasers

Q switched lasers

Pulsed laser operation

Diodes

Laser applications

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