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24 January 2019 Room temperature continuous wave operation of GaSb-based semiconductor disk laser near 2 μm
Jin-Ming Shang, Jian Feng, Cheng-Ao Yang, Shen-Wen Xie, Yi Zhang, Ye Yuan, Shu-Shan Huang, Yu Zhang, Cun-Zhu Tong, Zhi-Chuan Niu
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Proceedings Volume 11052, Third International Conference on Photonics and Optical Engineering; 110520T (2019) https://doi.org/10.1117/12.2521861
Event: The International Conference on Photonics and Optical Engineering, 2018, Xi'an, China
Abstract
The semiconductor epitaxial design and lasing characteristics of an optically barrier-pumped GaSb -based semiconductor disk laser (SDL) emitting at 2.0 μm optimized for resonant optical barrier pumping around 1470 nm are presented. Compared to conventional barrier-pumped devices with pump wavelength of 980nm, the novel barrier-pumped device with the smaller quantum deficit reaches a significantly higher power efficiency, and thus a higher output power at a given pump power, due to the lesser internal heat generation. Using an intracavity SiC heat spreader, a cw output power in excess of 300 mW has been achieved at a heat sink temperature of +15 °C, and still more than 500 mW at +10 °C.
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Jin-Ming Shang, Jian Feng, Cheng-Ao Yang, Shen-Wen Xie, Yi Zhang, Ye Yuan, Shu-Shan Huang, Yu Zhang, Cun-Zhu Tong, and Zhi-Chuan Niu "Room temperature continuous wave operation of GaSb-based semiconductor disk laser near 2 μm", Proc. SPIE 11052, Third International Conference on Photonics and Optical Engineering, 110520T (24 January 2019); https://doi.org/10.1117/12.2521861
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KEYWORDS
Semiconductor lasers
Semiconductors
Gallium antimonide
Disk lasers
Quantum wells
Continuous wave operation
Laser countermeasures
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