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24 January 2019 Design and experimental study of the high uniformity semiconductor linear laser light source
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Proceedings Volume 11052, Third International Conference on Photonics and Optical Engineering; 110520W (2019) https://doi.org/10.1117/12.2521914
Event: The International Conference on Photonics and Optical Engineering, 2018, Xi'an, China
Abstract
In order to meet the requirements of the new laser radar and laser active lighting for the miniaturized line light source, a linear laser light source that can be transmitted over long distances has been successfully designed and prepared. This linear laser light source is based on 808nm semiconductor laser. Firstly, a set of orthogonal placement plano-convex aspherical lens is used for collimating the laser beam of gauss distribution, thus the parallel beams that can be transmitted over long distances is obtained, and then through the Powell prism. Finally, the semiconductor laser is shaped into a laser light source with the slender and uniform intensity distribution. And we also have carried out an example design simulation with the Zemax optical design software and built an experimental system, and a laser light source has been successfully prepared with the divergence angles 54° of the fast directions and the uniformity 23.5% of the linear spot. The experimental results can match the Zemax simulation results well, which proves that the design method in this article is correct, simple and useful.
© (2019) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Shun Yao, Hongmei Zhang, Youqiang Liu, Hongyan Yu, and Jiaoyang Guan "Design and experimental study of the high uniformity semiconductor linear laser light source", Proc. SPIE 11052, Third International Conference on Photonics and Optical Engineering, 110520W (24 January 2019); https://doi.org/10.1117/12.2521914
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