Absorption Coefficient Of N-Type Hg[sub]1-x[/sub]Cd[sub]x[/sub]Te Samples

Xie-qin Liang; Yu-qin Guo; Xie-rong Hu; Jia-xiong Fang; Guo-sen Xu

doi:10.1117/12.960668

11 October 1989 Absorption Coefficient Of N-Type Hg_1-xCd_xTe Samples

Xie-qin Liang, Yu-qin Guo, Xie-rong Hu, Jia-xiong Fang, Guo-sen Xu

Proceedings Volume 1107, Infrared Detectors, Focal Plane Arrays, and Imaging Sensors; (1989) https://doi.org/10.1117/12.960668
Event: SPIE 1989 Technical Symposium on Aerospace Sensing, 1989, Orlando, FL, United States

Abstract

In this paper, we've studied the effects of exciton absorption and the Burstain-Moss shift on the absorption above the energy gap of n-type direct semiconductors and derived a more common expression of absorption. In addition, we've discussed the reasons why the absorption peaks of exciton in HgCdTe haven't been observed in experiments. We also have calculated the absorption coefficient of the free carrier in n-type HgCdTe samples by assuming the four processes of electron transition in the conduction band are independent to each other.

Citation Download Citation

Xie-qin Liang, Yu-qin Guo, Xie-rong Hu, Jia-xiong Fang, and Guo-sen Xu "Absorption Coefficient Of N-Type Hg_1-xCd_xTe Samples", Proc. SPIE 1107, Infrared Detectors, Focal Plane Arrays, and Imaging Sensors, (11 October 1989); https://doi.org/10.1117/12.960668

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