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9 September 2019 4H-SiC epitaxial Schottky detectors: deep-level transient spectroscopy (DLTS) and pulse height spectroscopy (PHS) measurements
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Abstract
Schottky barrier radiation detectors have been fabricated on n-type 4H-SiC epitaxial layers (Eg = 3.27 eV at 300 K) grown on low-resistive n-type 4H-SiC bulk substrates. Current-voltage (I-V) and capacitance-voltage (C-V) measurements were carried out, and using a thermionic emission model, Schottky barrier height of ~1.42 eV was obtained. Capacitance mode deep level transient spectroscopy (DLTS) revealed the presence of deep levels along with two shallow level defects related to titanium impurities (Ti(c)) and an unidentified deep electron trap located at 1.42 eV below the conduction band minimum. The concentration of the lifetime killer Z1/2 defect was found to be ~1013 cm-3. A 0.1 μCi 241Am radiation source was used to investigate the detector performance including charge collection efficiency (CCE) by pulse height spectroscopy (PHS), and an energy resolution of ~ 0.38% full-width half maxima (FWHM) was observed for alpha particles at ~ 5447 keV. The average diffusion length (Ld) of holes (minority carriers) were calculated to be ~ 13.6 μm using a drift-diffusion model and MATLAB code. An electronic noise analysis of front-end readout electronics in terms of equivalent noise charge revealed that the white series noise due to the detector capacitance has substantial effect on their spectroscopic detection performance.
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© (2019) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Krishna C. Mandal, Joshua W. Kleppinger, and Mohsin Sajjad "4H-SiC epitaxial Schottky detectors: deep-level transient spectroscopy (DLTS) and pulse height spectroscopy (PHS) measurements", Proc. SPIE 11114, Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XXI, 111140N (9 September 2019); https://doi.org/10.1117/12.2530184
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