Paper
6 September 2019 Graphene-based van der Waals heterostructures towards a new type of terahertz quantum-cascade lasers
Takayuki Watanabe, Deepika Yadav, Stephane Boubanga Tombet, Akira Satou, Alexander A. Dubinov, Victor Ryzhii, Taiichi Otsuji
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Abstract
Current-injection pumping in graphene makes carrier population inversion enabling lasing and/or amplification of terahertz (THz) radiation. We have recently demonstrated single-mode THz lasing at 100K in graphene-channel transistor laser structures. Introduction of a gated double-graphene-layered (G-DGL) van der Waals heterostructure is a promising route to further increase the operation temperature and radiation intensity via plasmon- and/or photon-assisted quantummechanical tunneling. We have proposed a cascading of the G-DGL unit element working as a new type of THz quantumcascade lasers. Numerical analyses demonstrate further increase of the quantum efficiency of THz lasing by orders of magnitude compared to a transistor or single G-DGL structure.
© (2019) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Takayuki Watanabe, Deepika Yadav, Stephane Boubanga Tombet, Akira Satou, Alexander A. Dubinov, Victor Ryzhii, and Taiichi Otsuji "Graphene-based van der Waals heterostructures towards a new type of terahertz quantum-cascade lasers", Proc. SPIE 11124, Terahertz Emitters, Receivers, and Applications X, 1112406 (6 September 2019); https://doi.org/10.1117/12.2529016
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Cited by 1 scholarly publication.
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KEYWORDS
Terahertz radiation

Heterojunctions

Graphene

Quantum cascade lasers

Plasmons

Quantum efficiency

Surface plasmons

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