One can observe terahertz (THz) radiation from various kinds of materials, when excited with a femtosecond laser. The observation of the THz waveforms enables us to explore ultrafast nature of electronic materials and devices as THz emission spectroscopy. When one excites the THz emission from a certain substance with the laser and visualizes the emission images by scanning the laser beam on it, the resolution of the images is limited by the laser beam diameter rather than THz wavelength. Thus, construction of a laser-THz emission microscope (LTEM) would provide a new tool for material/device science and industrial applications. We proposed and have been developing LTEM since 1996 and evaluated various materials and devices such as high-Tc superconductors, manganites, ferroelectrics, wide gap semiconductors, and VLSIs. Here we present recent progress on the study focusing on semiconductor industry application. the noncontact local evaluation of m-plane GaN wafers, deep-inside of multi-junction solar cells, failures in VLSIs, and the surface potential of passivated Si wafers will be introduced.
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