Progress on 0.33 NA EUV systems for High-Volume Manufacturing

Marcel Mastenbroek

doi:10.1117/12.2532110

26 September 2019 Progress on 0.33 NA EUV systems for High-Volume Manufacturing

Marcel Mastenbroek

Proceedings Volume 11147, International Conference on Extreme Ultraviolet Lithography 2019; 1114703 (2019) https://doi.org/10.1117/12.2532110
Event: SPIE Photomask Technology + EUV Lithography, 2019, Monterey, California, United States

Abstract

Progress on 0.33 NA EUV Systems for High-Volume Manufacturing With the introduction of the fifth-generation NXE:3400 scanner, ASML has brought EUV lithography to high-volume manufacturing (HVM) of the 7-nm logic node and beyond while fully supporting the use of pellicle. In this presentation, we give an update on lithographic performance results obtained from the latest NXE:3400 system that is characterized by a numerical aperture (NA) of 0.33, a pupil-fill ratio (PFR) of 0.2 and a throughput capability of more than 155 wafers per hour. To maximize the number of yielding dies per day, excellent overlay, focus, and critical dimension (CD) control have been realized, in combination with intrinsic tool stability with holistic control schemes. Stochastics are addressed throughout the production process and scanner contribution specifically. We will also show matching performance for both overlay and imaging, and further improvements in focus process dependencies for the 5-nm logic node and beyond, including the ASML roadmap for meeting the requirements for future nodes.

Conference Presentation

Citation Download Citation

Marcel Mastenbroek "Progress on 0.33 NA EUV systems for High-Volume Manufacturing", Proc. SPIE 11147, International Conference on Extreme Ultraviolet Lithography 2019, 1114703 (26 September 2019); https://doi.org/10.1117/12.2532110

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