EBL2 an EUV (Extreme Ultra-Violet) lithography beam line irradiation facility

Herman Bekman; Michael Dekker; Rob Ebeling; Jochem Janssen; Norbert Koster; Joop Meijlink; Freek Molkenboer; Kyri Nicolai; Michel van Putten; Corné Rijnsent; Arnold Storm; Jetske Stortelder; Chien-Ching Wu; Rory de Zanger

doi:10.1117/12.2536531

26 September 2019 EBL2 an EUV (Extreme Ultra-Violet) lithography beam line irradiation facility

Herman Bekman, Michael Dekker, Rob Ebeling, Jochem Janssen, Norbert Koster, Joop Meijlink, Freek Molkenboer, Kyri Nicolai, Michel van Putten, Corné Rijnsent, Arnold Storm, Jetske Stortelder, Chien-Ching Wu, Rory de Zanger

Author Affiliations +

Proceedings Volume 11147, International Conference on Extreme Ultraviolet Lithography 2019; 1114706 (2019) https://doi.org/10.1117/12.2536531
Event: SPIE Photomask Technology + EUV Lithography, 2019, Monterey, California, United States

Abstract

Adoption of EUV lithography for high-volume production is accelerating. TNO has been involved in lifetime studies from the beginning of the EUV alpha demo tools. One of the facilities for these studies is the EUV Beam Line (EBL1) designed and installed at TNO, in close cooperation with Carl Zeiss. There was a desire to improve on the performance of EBL1 in terms of source power and intensity, and in handling of full size EUV photomasks. For this purpose TNO has invested in the realization of a second EUV Beam Line: EBL2. EBL2 makes use of a tin fueled (USHIO) source in order to have a similar pulse length, shape and spectrum as an EUV scanner of ASML. Samples can be exposed to various doses/intensities of EUV light. Various process gasses can be introduced in a broad range of partial pressures and also sample temperature can be controlled. In-situ ellipsometry and in-situ X-ray Photoelectric Spectroscopy (XPS) is available to track surface changes/modifications. In this presentation we will discuss the capabilities of this unique research facility which is open for external customers studying the influence of EUV radiation on mirrors, sensors, fiducials, pellicles and EUV photomasks. We will discuss in this presentation parts of the validation studies and the experience we gained over the past year by running the setup for external customers.

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Herman Bekman, Michael Dekker, Rob Ebeling, Jochem Janssen, Norbert Koster, Joop Meijlink, Freek Molkenboer, Kyri Nicolai, Michel van Putten, Corné Rijnsent, Arnold Storm, Jetske Stortelder, Chien-Ching Wu, and Rory de Zanger "EBL2 an EUV (Extreme Ultra-Violet) lithography beam line irradiation facility", Proc. SPIE 11147, International Conference on Extreme Ultraviolet Lithography 2019, 1114706 (26 September 2019); https://doi.org/10.1117/12.2536531

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KEYWORDS

Extreme ultraviolet lithography

Extreme ultraviolet

Photomasks

Pellicles

Temperature metrology

Mirrors

Contamination

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