Status and performance of the 0.5-NA EUV microfield exposure tool at Berkeley Lab (Conference Presentation)

Christopher N. Anderson

doi:10.1117/12.2538717

Translator Disclaimer

16 October 2019 Status and performance of the 0.5-NA EUV microfield exposure tool at Berkeley Lab (Conference Presentation)

Christopher N. Anderson

Author Affiliations +

Proceedings Volume 11147, International Conference on Extreme Ultraviolet Lithography 2019; 1114712 (2019) https://doi.org/10.1117/12.2538717
Event: SPIE Photomask Technology + EUV Lithography, 2019, Monterey, California, United States

Abstract

To meet industry demand for EUV materials testing capabilities down to the 2 nm lithography node, the EUV Photoresist Testing Center at Berkeley Lab has been expanded to include a 8-nm resolution, 0.5-NA EUV microfield exposure system with robotic sample processing tailed for research. This paper provides an overview of the capabilities and performance of the 0.5-NA EUV exposure system and discusses printing results since user commissioning shifts began in Q2 2019.

Conference Presentation

Citation Download Citation

Christopher N. Anderson "Status and performance of the 0.5-NA EUV microfield exposure tool at Berkeley Lab (Conference Presentation)", Proc. SPIE 11147, International Conference on Extreme Ultraviolet Lithography 2019, 1114712 (16 October 2019); https://doi.org/10.1117/12.2538717

ACCESS THE FULL ARTICLE