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16 October 2019 Status and performance of the 0.5-NA EUV microfield exposure tool at Berkeley Lab (Conference Presentation)
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Abstract
To meet industry demand for EUV materials testing capabilities down to the 2 nm lithography node, the EUV Photoresist Testing Center at Berkeley Lab has been expanded to include a 8-nm resolution, 0.5-NA EUV microfield exposure system with robotic sample processing tailed for research. This paper provides an overview of the capabilities and performance of the 0.5-NA EUV exposure system and discusses printing results since user commissioning shifts began in Q2 2019.
Conference Presentation
© (2019) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Christopher N. Anderson "Status and performance of the 0.5-NA EUV microfield exposure tool at Berkeley Lab (Conference Presentation)", Proc. SPIE 11147, International Conference on Extreme Ultraviolet Lithography 2019, 1114712 (16 October 2019); https://doi.org/10.1117/12.2538717
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