An analysis of  EUV resist stochastic printing failures

M. I. Sanchez; G. M. Wallraff; N. Megiddo; W. D. Hinsberg

doi:10.1117/12.2537632

26 September 2019 An analysis of EUV resist stochastic printing failures

M. I. Sanchez, G. M. Wallraff, N. Megiddo, W. D. Hinsberg

Author Affiliations +

Proceedings Volume 11147, International Conference on Extreme Ultraviolet Lithography 2019; 1114717 (2019) https://doi.org/10.1117/12.2537632
Event: SPIE Photomask Technology + EUV Lithography, 2019, Monterey, California, United States

Abstract

A simple physicochemical description of stochastic printing failures is discussed. By combining this with combinatorial calculations of resist imaging chemistry and Monte Carlo analysis, estimates of the rates of random printing failures in nanoscale lithography can be made. This approach, based solely on component and photon statistics, provides results consistent with experimental reports. The method provides a general framework for predicting impacts of resist formulation, compositional and process changes on printing failures.

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M. I. Sanchez, G. M. Wallraff, N. Megiddo, and W. D. Hinsberg "An analysis of EUV resist stochastic printing failures", Proc. SPIE 11147, International Conference on Extreme Ultraviolet Lithography 2019, 1114717 (26 September 2019); https://doi.org/10.1117/12.2537632

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