Industrial photoresist development with the EUV laboratory exposure tool: mask fabrication, sensitivity and contrast

Sascha Brose; Serhiy Danylyuk; Franziska Grüneberger; Maik Gerngroß; Jochen Stollenwerk; Matthias Schirmer; Peter Loosen

doi:10.1117/12.2536794

26 September 2019 Industrial photoresist development with the EUV laboratory exposure tool: mask fabrication, sensitivity and contrast

Sascha Brose, Serhiy Danylyuk, Franziska Grüneberger, Maik Gerngroß, Jochen Stollenwerk, Matthias Schirmer, Peter Loosen

Author Affiliations +

Proceedings Volume 11147, International Conference on Extreme Ultraviolet Lithography 2019; 111471I (2019) https://doi.org/10.1117/12.2536794
Event: SPIE Photomask Technology + EUV Lithography, 2019, Monterey, California, United States

Abstract

Main application of the EUV laboratory exposure tool (EUV-LET) is the large-area patterning (cm²) of periodic nanostructures with half-pitches below 100 nm. Applications are found in various research fields (e.g. diffractive optical elements, anti-reflective coatings, artificial crystals, nanowires, biosensors) as well as in prototype development and small-batch production. Recently the working wavelength of the tool was changed from 10.9 nm to 13.5 nm in order to enable industrial photoresist development and resist characterization. In collaboration with the resist supplier Allresist GmbH we demonstrate how EUV photoresists can be effectively developed using a compact laboratory setup for rapid characterization of different resist formulations and development conditions. The collaboration provides a platform for identifying the needs of the industry and proves that the EUV-LET in research configuration can fulfill this challenging task. First part of this contribution focuses on the fabrication of multi-field resolution test masks. The extension of the developed phase-shifting mask fabrication process to line structures leads to several technological challenges that will be pointed out. Furthermore we present first contrast and sensitivity investigations for several resist formulations that will serve as a basis for upcoming resolution tests.

Citation Download Citation

Sascha Brose, Serhiy Danylyuk, Franziska Grüneberger, Maik Gerngroß, Jochen Stollenwerk, Matthias Schirmer, and Peter Loosen "Industrial photoresist development with the EUV laboratory exposure tool: mask fabrication, sensitivity and contrast", Proc. SPIE 11147, International Conference on Extreme Ultraviolet Lithography 2019, 111471I (26 September 2019); https://doi.org/10.1117/12.2536794

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available

Members: $17.00

Non-members: $21.00 ADD TO CART

PROCEEDINGS
9 PAGES

DOWNLOAD PAPER SAVE TO MY LIBRARY

GET CITATION

RIGHTS & PERMISSIONS

Get copyright permission Get copyright permission on Copyright Marketplace

KEYWORDS

Photoresist materials

Extreme ultraviolet lithography

Photoresist developing

Optical lithography

Lithography

Photomasks

Extreme ultraviolet

Show All Keywords

Keywords/Phrases

Search In:

Publication Years