Pattern dependent distortion and temperature variation in EUV mask

Chung-Hyun Ban; Eun-Sang Park; Ui-Jeong Ha; Chae-Yun Lim; Hye-Keun Oh

doi:10.1117/12.2536721

26 September 2019 Pattern dependent distortion and temperature variation in EUV mask

Chung-Hyun Ban, Eun-Sang Park, Ui-Jeong Ha, Chae-Yun Lim, Hye-Keun Oh

Proceedings Volume 11147, International Conference on Extreme Ultraviolet Lithography 2019; 111471R (2019) https://doi.org/10.1117/12.2536721
Event: SPIE Photomask Technology + EUV Lithography, 2019, Monterey, California, United States

Abstract

Extreme ultraviolet lithography (EUVL) uses reflective optics due to the high absorption of EUV sources, and EUV masks consist of multiple layers of composites to increase reflectance. As repeated exposure proceeded, heat accumulation due to energy absorption and resulting heat deformation were observed in each layer constituting the EUV mask. In particular, the absorber is made of a material with high absorption rate, so the temperature accumulation and deformation are different depending on the part with and without the absorber. This means that thermal distortion can cause mask overlay and local critical dimension uniformity (LCDU) problems, resulting in lower process yields. In this paper, we will examine the temperature accumulation and heat deformation depending on the presence of absorber when electrostatic chuck (ESC) and hydrogen cooling are applied.

Citation Download Citation

Chung-Hyun Ban, Eun-Sang Park, Ui-Jeong Ha, Chae-Yun Lim, and Hye-Keun Oh "Pattern dependent distortion and temperature variation in EUV mask", Proc. SPIE 11147, International Conference on Extreme Ultraviolet Lithography 2019, 111471R (26 September 2019); https://doi.org/10.1117/12.2536721

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