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26 September 2019 Characterization of quartz etched depth and optical density of opaque pattern for the wafer CD behavior on advanced mask
William Chou, Jeffrey Cheng, C. H. Twu, Adder Lee, Chih Hsuan Chao, Xin Ren Yu, Po Tsang Chen, Edgar Huang, Junjin Lin, Sweet Chen, James Cheng, Colbert Lu, Josh Tzeng, Jackie Cheng, Heng Jen Lee, Young Ham
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Proceedings Volume 11148, Photomask Technology 2019; 111481I (2019) https://doi.org/10.1117/12.2537938
Event: SPIE Photomask Technology + EUV Lithography, 2019, Monterey, California, United States
Abstract
In this paper we perform a foundational study on the impact of quartz etched depth, and optical density (OD) of mask opaque area, the 3D effect in ArF immersion lithography at advanced process node. The after development inspection (ADI) critical dimension (CD) variation may be caused by these 2 mentioned factors on the photomask, even the mask CD value of the measurement point is the same. Different cleaners and etchers which fix the same cleaning and etching time, induce different OD of reticle opaque patterns and several quartz etched depths. The relations between OD of reticle opaque patterns / quartz etched depth and ADI CD are the significant subject for successful pilot run which may moderate pilot run time and reduce rework costs in the lithography process. The focus of this study is the characterization of the correlation between OD of reticle opaque patterns / etched quartz depths and ADI CD. We experimentally study the structures from the theoretical introduction on the mask 3D phenomena, all of results are obtained using a MoSi binary ArF blank. A comprehensive wafer CD measurement result will be demonstrated in different OD of reticle opaque patterns and etched quartz depth, both simulation and experimentally based. The effect of fabricating the photomask quartz trenches will also be studied as well as the impact on through pitch CD and exposure latitude. The goal of this study is the demonstration of the practical influence on mask OD and the etched quartz depth of leading edge photomasks.
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William Chou, Jeffrey Cheng, C. H. Twu, Adder Lee, Chih Hsuan Chao, Xin Ren Yu, Po Tsang Chen, Edgar Huang, Junjin Lin, Sweet Chen, James Cheng, Colbert Lu, Josh Tzeng, Jackie Cheng, Heng Jen Lee, and Young Ham "Characterization of quartz etched depth and optical density of opaque pattern for the wafer CD behavior on advanced mask", Proc. SPIE 11148, Photomask Technology 2019, 111481I (26 September 2019); https://doi.org/10.1117/12.2537938
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KEYWORDS
Quartz
Photomasks
Critical dimension metrology
Semiconducting wafers
3D metrology
Binary data
Etching
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