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9 October 2019 Radiation-induced degradation of optoelectronic sensors
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Abstract
Space system undergo particularly hard natural radiation environment, but can also potentially be subject to the radiations injected in low earth orbit by the explosion of a nuclear weapons. The increasing use of optoelectronic components in space systems makes the risk assessment regarding the radiation effects of an increasing interest. This paper presents recent results about the degradation of optoelectronic devices in term of atomic displacements. This paper Most of this work has been developed under the EDA contract JIP-ICET2 A-1341-RT-GP within the CapTech Technologies for Components and Modules’ (TCM) in EDA. (Tracking #: SD102-11)
Conference Presentation
© (2019) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
C. Inguimbert, T. Nuns, D. Hervé, A. Vriet, J. Barbero, J. Moreno, A. Nedelcu, S. Ducret, O. Saint-Pé, F. Larnaudie, O. Gilard, and C. Aicardi "Radiation-induced degradation of optoelectronic sensors", Proc. SPIE 11159, Electro-Optical and Infrared Systems: Technology and Applications XVI, 111590N (9 October 2019); https://doi.org/10.1117/12.2532289
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