Preparation of low-resistance tunnel junction for high efficiency multi-junction semiconductor laser diodes

Zexu Yuan; Jianjun Li; Yonggang Zou; Menghuan Wang; Jie Fan; Zhenyu Wen; Hongkang Cao; Jun Deng; Jun Han; Xiaohui Ma

doi:10.1117/12.2533450

17 May 2019 Preparation of low-resistance tunnel junction for high efficiency multi-junction semiconductor laser diodes

Zexu Yuan, Jianjun Li, Yonggang Zou, Menghuan Wang, Jie Fan, Zhenyu Wen, Hongkang Cao, Jun Deng, Jun Han, Xiaohui Ma

Proceedings Volume 11170, 14th National Conference on Laser Technology and Optoelectronics (LTO 2019); 111701L (2019) https://doi.org/10.1117/12.2533450
Event: Fourteenth National Conference on Laser Technology and Optoelectronics, 2019, Shanghai, China

Abstract

Low reverse-bias series resistance tunnel junctions (TJs) are the key to improving the performances of high efficiency multi-junction semiconductor laser diodes (MJLDs). In this paper, InGaAs QW TJ and InGaAs DQW TJ with single InGaAs layer and double InGaAs layers inserted into GaAs TJs separately, are proposed. TJ chips were fabricated by metal organic chemical vapor deposition (MOCVD) technology and semiconductor process. The measurement results of the devices display that the operating voltage of the InGaAs QW TJ and the InGaAs DQW TJ is lower than that of the GaAs TJ under the same injection current, whether it is a small current or a large current, and the InGaAs DQW TJ operating voltage is lower than that of the InGaAs QW TJ. Both GaAs TJ and InGaAs DQW TJ were applied to 1060 nm dual active region semiconductor laser diode. The ridge lasers with a strip width of 100μm and a cavity length of 2 mm were fabricated. The working voltage is reduced from 3.81 V to 3.38 V at 1 A drive current. Further experimental results indicate that the reverse-bias series resistance of InGaAs QW TJ and InGaAs DQW TJ is lower than that of GaAs TJ, and the performances of InGaAs DQW TJ are the best. This is of great significance to reduce the heat loss of MJLDs and improve its performances.

Citation Download Citation

Zexu Yuan, Jianjun Li, Yonggang Zou, Menghuan Wang, Jie Fan, Zhenyu Wen, Hongkang Cao, Jun Deng, Jun Han, and Xiaohui Ma "Preparation of low-resistance tunnel junction for high efficiency multi-junction semiconductor laser diodes", Proc. SPIE 11170, 14th National Conference on Laser Technology and Optoelectronics (LTO 2019), 111701L (17 May 2019); https://doi.org/10.1117/12.2533450

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available

Members: $17.00

Non-members: $21.00 ADD TO CART

PROCEEDINGS
8 PAGES

DOWNLOAD PAPER SAVE TO MY LIBRARY

GET CITATION

RIGHTS & PERMISSIONS

Get copyright permission Get copyright permission on Copyright Marketplace

KEYWORDS

Indium gallium arsenide

Gallium arsenide

Semiconductor lasers

Quantum wells

Doping

Diodes

Resistance

Show All Keywords

Keywords/Phrases

Search In:

Publication Years