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17 May 2019 Continuous-wave mid-infrared GaSb-based optically pumped semiconductor disk laser operating at 2 μm
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Proceedings Volume 11170, 14th National Conference on Laser Technology and Optoelectronics (LTO 2019); 111701P (2019) https://doi.org/10.1117/12.2533460
Event: Fourteenth National Conference on Laser Technology and Optoelectronics, 2019, Shanghai, China
Abstract
The growth conditions and lasing characteristics of the optically barrier-pumped GaSb - based semiconductor disk laser (SDL) emitting near 2 μm in an external cavity configuration are reported. It is made of a GaSb/AlAsSb Bragg reflector, a Ga0.8In0.2Sb/GaSb multi quantum-well active region and an Al0.8Ga0.2As0.03Sb0.97 window layer. Using an intracavity SiC heat spreader, a cw output power in excess of 1.12 W has been achieved at a heat sink temperature of 0 °C.
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Jin-Ming Shang, Jian Feng, Cheng-Ao Yang, Shen-Wen Xie, Yi Zhang, Yu Zhang, Fu-hui Shao, Cun-Zhu Tong, and Zhi-Chuan Niu "Continuous-wave mid-infrared GaSb-based optically pumped semiconductor disk laser operating at 2 μm", Proc. SPIE 11170, 14th National Conference on Laser Technology and Optoelectronics (LTO 2019), 111701P (17 May 2019); https://doi.org/10.1117/12.2533460
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