Impact of quantum capacitance on the characteristics of MoS2 field effect transistor

Q. H. Tan; W. P. Ren; Q. J. Wang; Y. K. Liu

doi:10.1117/12.2533596

17 May 2019 Impact of quantum capacitance on the characteristics of MoS₂ field effect transistor

Q. H. Tan, W. P. Ren, Q. J. Wang, Y. K. Liu

Proceedings Volume 11170, 14th National Conference on Laser Technology and Optoelectronics (LTO 2019); 1117028 (2019) https://doi.org/10.1117/12.2533596
Event: Fourteenth National Conference on Laser Technology and Optoelectronics, 2019, Shanghai, China

Abstract

MoS₂ transistors with SiO₂ gate insulators were fabricated from the experiment. The Raman and Photoluminescence of monolayer MoS₂ and the electrical and photoelectric properties of prepared MoS₂ transistors were investigated. Notably, the electrical performance model MoS₂ transistor was carried out by considering the quantum effect of capacity building of MoS₂ channel, and comparison analysis according to the result of simulation and experiment results, the model is suitable for the system study of MoS₂ transistor. These results suggest that MoS₂ transistors are suitable for nanoelectronics and optoelectronics devices.

Citation Download Citation

Q. H. Tan, W. P. Ren, Q. J. Wang, and Y. K. Liu "Impact of quantum capacitance on the characteristics of MoS₂ field effect transistor", Proc. SPIE 11170, 14th National Conference on Laser Technology and Optoelectronics (LTO 2019), 1117028 (17 May 2019); https://doi.org/10.1117/12.2533596

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