Influence of high temperature annealing on AC electric properties of SiO2 thin layers implanted with In and Sb ions

Karolina Czarnacka; Tomasz N. Koltunowicz; Aleksander K. Fedotov

doi:10.1117/12.2536668

6 November 2019 Influence of high temperature annealing on AC electric properties of SiO₂ thin layers implanted with In and Sb ions

Karolina Czarnacka, Tomasz N. Koltunowicz, Aleksander K. Fedotov

Author Affiliations +

Proceedings Volume 11176, Photonics Applications in Astronomy, Communications, Industry, and High-Energy Physics Experiments 2019; 111764U (2019) https://doi.org/10.1117/12.2536668
Event: Photonics Applications in Astronomy, Communications, Industry, and High-Energy Physics Experiments 2019, 2019, Wilga, Poland

Abstract

This paper presents results of AC measurements of resistance R_p, phase angle θ, capacity C_p and loss tangent tgδ in dependences on frequency and temperature for InSb-SiO₂/Si nanocomposite, immediately after preparation and annealed at 1273 K. The material was obtained by the In⁺ and Sb⁺ ions implantation into a SiO₂ thin layer. Using obtained parameters frequency dependence of conductivity σ, real and imaginary components of permittivity were determined. This work refers to the hopping mechanism of conductivity and relaxation mechanisms of prepared material.

Citation Download Citation

Karolina Czarnacka, Tomasz N. Koltunowicz, and Aleksander K. Fedotov "Influence of high temperature annealing on AC electric properties of SiO₂ thin layers implanted with In and Sb ions", Proc. SPIE 11176, Photonics Applications in Astronomy, Communications, Industry, and High-Energy Physics Experiments 2019, 111764U (6 November 2019); https://doi.org/10.1117/12.2536668

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