CONFERENCE PROCEEDINGS
Advanced Search
Home > Proceedings > Volume 11176 > Article
Paper
6 November 2019 AlGaN/GaN HEMTs for the purposes of electronic applications
Piotr A. Caban, Marek Wojcik, Jaroslaw Gaca, Piotr Knyps, Dominika Teklinska, Ewa Dumiszewska
Author Affiliations +
Proceedings Volume 11176, Photonics Applications in Astronomy, Communications, Industry, and High-Energy Physics Experiments 2019; 111764Z (2019) https://doi.org/10.1117/12.2536751
Event: Photonics Applications in Astronomy, Communications, Industry, and High-Energy Physics Experiments 2019, 2019, Wilga, Poland
Abstract
Aluminium nitride is particularly interesting due to its unique properties such as a wide and direct band gap as well as high thermal conductivity. High quality AlN epitaxial layers are needed in UV devices and are used as a buffer layer in the deposition of HEMTs. Its quality has an impact on further deposition as well as two dimensional electron gas properties for AlGaN/GaN HEMTs. It was observed that AlN has crucial impact on electrical as well as structural properties of AlGaN/GaN heterostructures.
© (2019) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Citation Download Citation
Piotr A. Caban, Marek Wojcik, Jaroslaw Gaca, Piotr Knyps, Dominika Teklinska, and Ewa Dumiszewska "AlGaN/GaN HEMTs for the purposes of electronic applications", Proc. SPIE 11176, Photonics Applications in Astronomy, Communications, Industry, and High-Energy Physics Experiments 2019, 111764Z (6 November 2019); https://doi.org/10.1117/12.2536751
ACCESS THE FULL ARTICLE
ORGANIZATIONAL
Sign in with credentials provided by your organization.
INSTITUTIONAL
Select your institution to access the SPIE Digital Library.
SELECT YOUR INSTITUTION
PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.
PERSONAL SIGN IN
No SPIE Account? Create one
PURCHASE THIS CONTENT
SUBSCRIBE TO DIGITAL LIBRARY
50 downloads per 1-year subscription
Members: $195
Non-members: $335 ADD TO CART
25 downloads per 1 - year subscription
Members: $145
Non-members: $250 ADD TO CART
PURCHASE SINGLE ARTICLE
Includes PDF, HTML & Video, when available
Members: $17.00
Non-members: $21.00 ADD TO CART
PROCEEDINGS
 6 PAGES
DOWNLOAD PAPER SAVE TO MY LIBRARY
GET CITATION
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Aluminum nitride
Gallium nitride
Field effect transistors
Etching
X-rays
RELATED CONTENT
New directions in GaN material research: thinner and smaller
Proceedings of SPIE (March 08 2014)
Traps and defects in pre and post proton irradiated...
Proceedings of SPIE (March 04 2013)
Interface control technologies for high power GaN transistors Self...
Proceedings of SPIE (February 26 2016)
Normally off p GaN gate InAlN GaN HEMTs grown on...
Proceedings of SPIE (March 01 2019)
High electron mobility AlGaN AlN GaN HEMT structure with a...
Proceedings of SPIE (October 11 2012)
Study of normally off AlGaN GaN HEMTs with recessed p...
Proceedings of SPIE (February 28 2024)
Recent advances of high voltage AlGaN/GaN power HFETs
Proceedings of SPIE (February 16 2009)
Subscribe to Digital Library
Receive Erratum Email Alert
Back to Top