Paper
29 August 2019 Influence of the dose assignment and fracturing type on patterns exposed by a variable shaped e-beam writer: simulation vs experiment
Varvara Brackmann, Michael Friedrich, Clyde Browning, Norbert Hanisch, Benjamin Uhlig
Author Affiliations +
Proceedings Volume 11177, 35th European Mask and Lithography Conference (EMLC 2019); 1117713 (2019) https://doi.org/10.1117/12.2534642
Event: 35th European Mask and Lithography Conference, 2019, Dresden, Germany
Abstract
The result of electron beam lithography is influenced by many effects: forward and backward scattering, formation of secondary electrons, re-scattering of electrons, chemicals diffusion in the resist material, wafer stack, etc. To achieve high resolution all these effects should be taken into account. Commonly, the electron energy distribution in the exposed matter is described by the Point Spread Function (PSF). This is a simple approach which takes into account large portion of phenomena using few parameters. PSF function is a Gauss or multiple Gauss function, which is determined experimentally by the calibration procedure. Each resist material with corresponding stack is characterised by its own PSF, in case of double Gaussian, with the following parameters: α, β and η. In the current work the PSF parameters were systematically varied to study their influence on the dose assignment and resulting pattern. This gives a broader understanding of the correction mechanism using PSF. Furthermore, the resulting shape of the structure is influenced not only by the PSF parameters and dose assignment, but by the fracturing type as well. All these effects were studied using experimental and simulation approaches.
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Varvara Brackmann, Michael Friedrich, Clyde Browning, Norbert Hanisch, and Benjamin Uhlig "Influence of the dose assignment and fracturing type on patterns exposed by a variable shaped e-beam writer: simulation vs experiment", Proc. SPIE 11177, 35th European Mask and Lithography Conference (EMLC 2019), 1117713 (29 August 2019); https://doi.org/10.1117/12.2534642
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KEYWORDS
Point spread functions

Scattering

Scanning electron microscopy

Tolerancing

Critical dimension metrology

Calibration

Electron beam lithography

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