Development of massive parallel electron beam write system

Masayoshi Esashi; Hiroshi Miyaguchi; Akira Kojima; Naokatsu Ikegami; Nobuyoshi Koshida; Masanori Sugata; Hideyuki Ohyi

doi:10.1117/12.2532971

27 June 2019 Development of massive parallel electron beam write system

Masayoshi Esashi, Hiroshi Miyaguchi, Akira Kojima, Naokatsu Ikegami, Nobuyoshi Koshida, Masanori Sugata, Hideyuki Ohyi

Author Affiliations +

Proceedings Volume 11178, Photomask Japan 2019: XXVI Symposium on Photomask and Next-Generation Lithography Mask Technology; 111780B (2019) https://doi.org/10.1117/12.2532971
Event: Photomask Japan 2019, 2019, Yokohama, Japan

Abstract

Prototype of Massively Parallel Electron Beam Write (MPEBW) system was developed for mask less lithography. A 100×100 array of nanocrystalline-silicon (nc-Si) electron emitter is controlled by an active matrix driving LSI. The LSI receives external writing bitmap data, and switches 100×100 electron beamlets on/off. The operation of the LSI was confirmed and 1/100 reduction electron optic system using the active matrix emitter array was fabricated. A 17×17 nc-Si emitter array was assembled with a 1:1 exposure test system and driven by commercially available display driver LSIs. The active matrix electron beam (EB) exposure was confirmed.

Citation Download Citation

Masayoshi Esashi, Hiroshi Miyaguchi, Akira Kojima, Naokatsu Ikegami, Nobuyoshi Koshida, Masanori Sugata, and Hideyuki Ohyi "Development of massive parallel electron beam write system", Proc. SPIE 11178, Photomask Japan 2019: XXVI Symposium on Photomask and Next-Generation Lithography Mask Technology, 111780B (27 June 2019); https://doi.org/10.1117/12.2532971

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