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13 September 2019 Growth and preliminary characterization of InAsSb photodiodes for mid-wave infrared detection
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Proceedings Volume 11204, 14th Conference on Integrated Optics: Sensors, Sensing Structures, and Methods; 112040E (2019) https://doi.org/10.1117/12.2536801
Event: Fourteenth Integrated Optics-Sensors, Sensing Structures and Methods Conference, 2019, Szcyrk-Gliwice, Poland
Abstract
This paper reports on the growth details and preliminary characterization of mid-wave infrared radiation InAsSb bariodes. The main device parameters were measured for barrier photodetector heterostructures with three different InAsSb absorber thicknesses: 1 µm (sample no. 1); 1.70 μm (sample no. 2); 2.56 μm (sample no. 3) and one non intentionally doped, 1.70 μm (sample no. 4). The crystallographic structure, responsivity, I-V curves and detectivity characterization were performed.
© (2019) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Kordian Lipski, Łukasz Kubiszyn, Krystian Michalczewski, Krzysztof Murawski, and Piotr Martyniuk "Growth and preliminary characterization of InAsSb photodiodes for mid-wave infrared detection", Proc. SPIE 11204, 14th Conference on Integrated Optics: Sensors, Sensing Structures, and Methods, 112040E (13 September 2019); https://doi.org/10.1117/12.2536801
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