Presentation
9 March 2020 High peak power laser diodes at 1.5 um with integrated wavelength locking element (Conference Presentation)
Antti Aho, Jukka Viheriälä, Heikki Virtanen, Topi Uusitalo, Mervi Koskinen, Jarno Reuna, Mircea Guina
Author Affiliations +
Proceedings Volume 11262, High-Power Diode Laser Technology XVIII; 112620E (2020) https://doi.org/10.1117/12.2542095
Event: SPIE LASE, 2020, San Francisco, California, United States
Abstract
We report on the development of high peak-power laser diodes emitting in the 1.5 µm wavelength band. Two design approaches, broad-area laser diodes and tapered laser diodes, are described, both with integrated wavelength locking using distributed Bragg reflector. The peak output power of the broad-area components and tapered components is 6.1 W and 4.6 W, respectively. The output spectra of both component types are narrow with less than 0.3 nm full width at half-maximum, and due to the grating the emission wavelength is resistant to drift caused by temperature changes.
Conference Presentation
© (2020) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Antti Aho, Jukka Viheriälä, Heikki Virtanen, Topi Uusitalo, Mervi Koskinen, Jarno Reuna, and Mircea Guina "High peak power laser diodes at 1.5 um with integrated wavelength locking element (Conference Presentation)", Proc. SPIE 11262, High-Power Diode Laser Technology XVIII, 112620E (9 March 2020); https://doi.org/10.1117/12.2542095
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KEYWORDS
Semiconductor lasers

Quantum wells

Cladding

Distributed Bragg reflectors

Fabry–Perot interferometers

LIDAR

Optical design

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