Presentation + Paper
2 March 2020 Power scaling of laser diode modules using high-power DBR chips
Alessandro Mirigaldi, Valentina Serafini, Paola Gotta, Giulia Pippione, Claudio Coriasso, Roberto Paoletti, Guido Perrone
Author Affiliations +
Proceedings Volume 11262, High-Power Diode Laser Technology XVIII; 112620W (2020) https://doi.org/10.1117/12.2544947
Event: SPIE LASE, 2020, San Francisco, California, United States
Abstract
A family of laser diode modules emitting hundreds of watt and based on intrinsically wavelength stabilized narrow linewidth high-power Distributed Bragg Reflector (DBR) chips has been manufactured and fully characterized. The module layout exploits a proprietary architecture to combine through spatial and wavelength multiplexing several highly manufacturable chips that integrate a grating and therefore do not require additional external stabilization devices to allow dense wavelength multiplexing. Power levels going from 200W to 400W in a 135 micron core fiber have been achieved using two to four wavelengths. The narrow spectral emission of each chip makes the modules suitable not only for direct-diode material processing, but also for laser pumping.
Conference Presentation
© (2020) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Alessandro Mirigaldi, Valentina Serafini, Paola Gotta, Giulia Pippione, Claudio Coriasso, Roberto Paoletti, and Guido Perrone "Power scaling of laser diode modules using high-power DBR chips", Proc. SPIE 11262, High-Power Diode Laser Technology XVIII, 112620W (2 March 2020); https://doi.org/10.1117/12.2544947
Lens.org Logo
CITATIONS
Cited by 1 scholarly publication.
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Multiplexing

Semiconductor lasers

High power lasers

Wavelength division multiplexing

Diodes

Back to Top