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9 March 2020 High-power InAs quantum dot VECSEL with fundamental mode emission at 1.5 µm (Conference Presentation)
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Abstract
Vertical-external-cavity surface-emitting lasers employing QDs as gain media in comparison to QW-based VECSELs can offer beneficial lasing features, such as, temperature resilience, broadband gain and wider wavelength tunability. We demonstrate the first QD-based VECSEL providing 2 W emission at 1.5 µm and a tuning range of 60 nm. This achievement paves the way to multi-Watt VECSELs with extended wavelength tunability.
Conference Presentation
© (2020) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Kostiantyn Nechay, Alexander Mereuta, Cyril Paranthoën, Gaelle Brevalle, Christophe Levallois, Mehdi Alouini, Nicolas Chevalier, Grigore Suruceanu, Andrei Caliman, Eli Kapon, and Mircea Guina "High-power InAs quantum dot VECSEL with fundamental mode emission at 1.5 µm (Conference Presentation)", Proc. SPIE 11263, Vertical External Cavity Surface Emitting Lasers (VECSELs) X, 112630J (9 March 2020); https://doi.org/10.1117/12.2548436
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