Presentation + Paper
2 March 2020 Measurement of laser damage threshold of CdSiP2 at 1064 nm and 1550 nm
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Abstract
Laser damage thresholds of CdSiP2 have previously been measured at wavelengths of 1064 nm and 2090 nm using nanosecond durations lasers1,2 and at 1940 nm using a continuous wave laser3. In the continuous wave measurement attempted in the past3, the CdSiP2 sample was found to withstand an irradiance of 150 kW/cm2 for over 60 seconds without any damage to the sample, whereas earlier grown samples of CdSiP2 exposed to the same irradiance level damaged in 5 seconds or less. In that work, or in any other work to our knowledge, the samples were not exposed to millisecond or longer duration lasers at 1064 nm or 1550 nm. Because of the importance of CdSiP2 in nonlinear frequency conversion of lasers in the 1000 to 2000 nm spectral range, this study was performed to measure the damage thresholds at wavelengths in this spectral regime. Results of the damage threshold at different laser spot sizes will be presented.
Conference Presentation
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Amelia Carpenter, Kevin T. Zawilski, Peter G. Schunemann, San-Hui Chi, and Shekhar Guha "Measurement of laser damage threshold of CdSiP2 at 1064 nm and 1550 nm", Proc. SPIE 11264, Nonlinear Frequency Generation and Conversion: Materials and Devices XIX, 112640X (2 March 2020); https://doi.org/10.1117/12.2543795
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KEYWORDS
Laser damage threshold

Light emitting diodes

Continuous wave operation

Crystals

Frequency conversion

Light sources

Optical filters

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