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22 December 1989 Plasma Dynamics And Picosecond Optical Properties Of CdTe
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Proceedings Volume 1127, Nonlinear Optical Materials II; (1989)
Event: 1989 International Congress on Optical Science and Engineering, 1989, Paris, France
Electron-hole pairs have been created in a near infrared II-VI semiconductor, CdTe, by picosecond optical pumping. The plasma relaxation dynamics have been investigated using time resolved luminescence technique. The plasma temperature and the bandgap renormalization are studied during the relaxation regime following the excitation pulse. Luminescence data are analysed in the frame of the standard free-particle model and also including the carrier dampings calculated in the plasmon pole approximation. In both cases, we conclude that the plasma cooling is slowed down at high initial plasma density (typically for p ≥ (3-4) x 1017/cm3). Nevertheless, the temperatures deduced during the relaxation kinetics are significantly lower when damping is taken into account. Band gap renormalization is also studied. The experimental results are in reasonable agreement with the usual gap shrinkage theories.
© (1989) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
J. H. Collet, W. W. Ruhle, M. Pugnet, K. Leo, and A. Million "Plasma Dynamics And Picosecond Optical Properties Of CdTe", Proc. SPIE 1127, Nonlinear Optical Materials II, (22 December 1989);

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